?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet september 2007 qfet ? FQP12N60C / fqpf12n60c 600v n-channel mosfet features ? 12a, 600v, r ds(on) = 0.65 ? @v gs = 10 v ? low gate charge ( typical 48 nc) ? low crss ( typical 21pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. absolute maximum ratings *drain current limited by maximum junction temperature thermal characteristics to-220 fqp series g s d to-220f fqpf series g s d d g s symbol parameter FQP12N60C fqpf12n60c unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 12 7.4 12* 7.4* a a i dm drain current - pulsed (note 1) 48 48* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 870 mj i ar avalanche current (note 1) 12 a e ar repetitive avalanche energy (note 1) 22.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 225 1.78 51 0.41 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter FQP12N60C fqpf12n60c unit r jc thermal resistance, junction-to-case 0.56 2.43 c/w r js thermal resistance, case-to-sink typ. 0.5 -- c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w
2 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 11mh, i as = 12a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 12a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity FQP12N60C FQP12N60C to-220 - - 50 fqpf12n60c fqpf12n60c to-220f - - 50 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c--0.5--v/ c i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10v, i d = 6a -- 0.53 0.65 ? g fs forward transconductance v ds = 40v, i d = 6a (note 4) -- 13 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1760 2290 pf c oss output capacitance -- 182 235 pf c rss reverse transfer capacitance -- 21 28 pf switching characteristics t d(on) turn-on delay time v dd = 300v, i d = 12a r g = 25 ? (note 4, 5) -- 30 70 ns t r turn-on rise time -- 85 180 ns t d(off) turn-off delay time -- 140 280 ns t f turn-off fall time -- 90 190 ns q g total gate charge v ds = 400v, i d = 12a v gs = 10v (note 4, 5) -- 48 63 nc q gs gate-source charge -- 8.5 -- nc q gd gate-drain charge -- 21 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 12 a i sm maximum pulsed drain-source diode forward current -- -- 48 a v sd drain-source diode forward voltage v gs = 0v, i s = 12a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 12a di f /dt =100a/ s (note 4) -- 420 -- ns q rr reverse recovery charge -- 4.9 -- c
3 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1020304050 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i ? d = 12a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for FQP12N60C for fqpf12n60c figure 10. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 6.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ ] ?
5 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for FQP12N60C figure 11-2. transient thermal response curve for fqpf12n60c 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : ? 1. z jc (t) = 0.56 /w max. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 2.43 /w m ax. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
6 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
7 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
8 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
9 www.fairchildsemi.com FQP12N60C / fqpf12n60c rev. b1 FQP12N60C / fqpf12n60c 600v n-channel mosfet mechanical dimensions (continued) (7.00) (0.70) max1.47 (30 ) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f dimensions in millimeters
10 www.fairchildsemi.com 10 www.fairchildsemi.com FQP12N60C / fqpf12n60c 600v n-channel mosfet FQP12N60C / fqpf12n60c rev. b1 trademarks the following are registered and unregistered tr ademarks and service marks fairchild semi conductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make ch anges without further notice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty ther ein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? ? datasheet identification product status definition advance information formative or in design this datasheet contains the desi gn specifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semi conductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i31
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